FDC6312P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC6312P
Datasheet:
Description:
MOSFETs SSOT-6 SMD/SMT P-Channel number of channels:2 960 mW -20 V Continuous Drain Current (ID):2.3 A 7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 3 mm |
| Width | 1.7 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 115 MΩ |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.036 g |
| Number of Elements | 2 |
| Current Rating | -2.3 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 960 mW |
| Power Dissipation | 960 mW |
| Threshold Voltage | -900 mV |
| Number of Channels | 2 |
| Input capacitance | 467 pF |
| Continuous Drain Current (ID) | 2.3 A |
| Rds On Max | 115 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 18 ns |
| Element Configuration | Dual |
| Rise Time | 13 ns |
| Dual Supply Voltage | -20 V |
| Gate Charge | 7 nC |
| Drain to Source Resistance | 115 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -900 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 28
Distributors
pcbx
pcbxUnit Price$0.49642
Ext.Price$0.49642
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.49642 | $0.49642 |
| 10 | $0.39533 | $3.95330 |
| 25 | $0.36071 | $9.01775 |
| 50 | $0.32912 | $16.45600 |
| 100 | $0.30031 | $30.03100 |
| 300 | $0.28808 | $86.42400 |
| 500 | $0.27635 | $138.17500 |
| 1000 | $0.26132 | $261.32000 |